A group of  advanced materials scientists at Australia’s Scientific research institution where WIFI was invented , The CSIRO and the Royal Melbourne Institute of Technology believe they have found a way to make “Graphene” more usable in electronics applications.

Australian Research Breakthrough for Nano gadgets  potential

By creating these layered nano-sheets with these materials  the CSIRO’s Dr Serge Zhuiykov said “electrons are able to zip through with minimal scattering”.

According to scientists “ Exfoliation is used to create sheets of their material around 11 nanometers thick, which they then turned into a semiconductor to fabricate transistors”

The result is a device with electron mobility greater than 1,100 cm²/Vs (centimeters squared per volt-second), which they state exceeds the current standard for low dimensional silicon and the current silicon chips that are used in todays electronics

Currently silicon chips are said  to have reached their limit in speed and ability  to store a  sufficient electrical charge for more power hungry devices

According to RMIT’s Professor Kourosh Kalantar-zadeh,  with this breakthrough find  the material can be used to create devices and gadgets that are not only smaller  but will also support faster data transfer speeds.

The researchers  said that more work needs to be done, before they can develop actual gadgets using this new 2D nano-material. This new material has the  potential  for a new electronics revolution.

The research included participants from Monash University, UCLA, MIT and lead author RMIT doctoral researcher Sivacarendran Balendhran and CSIRO

Credits:

Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide

1. Sivacarendran Balendhran^1,*,
2. Junkai Deng²,
3. Jian Zhen Ou¹,
4. Sumeet Walia¹,
5. James Scott¹,
6. Jianshi Tang³,
7. Kang L. Wang³,
8. Matthew R. Field⁴,
9. Salvy Russo⁴,
10. Serge Zhuiykov⁵,
11. Michael S. Strano⁶,
12. Nikhil Medhekar^2,*,
13. Sharath Sriram¹,
14. Madhu Bhaskaran^1,*,
15. Kourosh Kalantar-zadeh^1,